The present invention is embodied in a method of operating an inductively coupled plasma reactor for processing a semiconductor wafer, the reactor including a vacuum chamber for containing the wafer, a process gas source, a semiconductor window electrode facing an interior portion of the chamber, an...http://www.google.de/patents/US6444084?utm_source=gb-gplus-sharePatent US6444084 - Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
