To effectively crystallize an amorphous semiconductor film comprising silicon by utilizing nickel element and remove nickel element contributed to the crystallization, a mask 103 is provided on an amorphous silicon film 102, oxide film patterns 107 and 108 including nickel are formed, phosphorus is doped...http://www.google.de/patents/US6974732?utm_source=gb-gplus-sharePatent US6974732 - Semiconductor device method of manufacturing
