The present invention provides a method for forming an improved dielectric layer for semiconductor devices such as gate structures and capacitors. The method utilizes a layer of (TaO)1-x(TiO)xN (x defined herein) as a substitute for SiO2, together with one or more additional procedures to minimize or...http://www.google.de/patents/US7371670?utm_source=gb-gplus-sharePatent US7371670 - Method for forming a (TaO)1-x(TiO)xN dielectric layer in a semiconductor device
