A method of aligning a plurality of empty-spaced buried patterns formed in semiconductor monocrystalline substrates is disclosed. In an exemplary embodiment, high-temperature metal marks are formed to include a conductive material having a melting temperature higher than an annealing temperature used...http://www.google.de/patents/US6949839?utm_source=gb-gplus-sharePatent US6949839 - Aligned buried structures formed by surface transformation of empty spaces in solid state materials
