A field-effect transistor (FET) device and method of fabrication uses an electrically interconnected polycrystalline or microcrystalline silicon carbide (SiC) gate having a lower electron affinity and higher work function than a polysilicon gate FET. The smaller threshold voltage magnitude of the SiC...http://www.google.de/patents/US6835638?utm_source=gb-gplus-sharePatent US6835638 - Silicon carbide gate transistor and fabrication process
