Methods of fabricating a metal contact structure for a laser diodes are provided, wherein the method comprises providing a UV transparent semiconductor substrate, a UV transparent semiconductor epilayer defining a ridge disposed between etched epilayer edges, the epilayer being disposed over the UV transparent...http://www.google.de/patents/US7833695?utm_source=gb-gplus-sharePatent US7833695 - Methods of fabricating metal contact structures for laser diodes using backside UV exposure
