A semiconductor device includes conductive features within a gate electrode level region that are each fabricated from a respective originating rectangular-shaped layout feature having a centerline aligned parallel to a first direction. The conductive features form gate electrodes of first and second...http://www.google.de/patents/US20100187623?utm_source=gb-gplus-sharePatent US20100187623 - Linear Gate Level Cross-Coupled Transistor Device with Cross-Coupled Transistors Defined on Two Gate Electrode Tracks with Crossing Gate Electrode Connections
