A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes nitridizing a thin silicon oxide film in a low power, direct plasma formed from nitrogen. A gas having a lower ionization energy than nitrogen, such as for example, helium, may be used in combination...http://www.google.de/patents/US6610615?utm_source=gb-gplus-sharePatent US6610615 - Plasma nitridation for reduced leakage gate dielectric layers
