P-type MOSFETs (PMOSFETs) are formed by encapsulating the gate with an insulator and depositing a germanium containing layer outside the sidewalls, then diffusing the germanium into the silicon-on-insulator layer or bulk silicon by annealing or by oxidizing to form graded embedded silicon-germanium source-drain...http://www.google.de/patents/US7288443?utm_source=gb-gplus-sharePatent US7288443 - Structures and methods for manufacturing p-type MOSFET with graded embedded silicon-germanium source-drain and/or extension
