A program voltage signal implemented as a series of increasing program voltage pulses is applied to a set of non-volatile storage elements. Different increment values can be used when programming memory cells to different memory states. A smaller increment value can be used when programming memory cells...http://www.google.de/patents/US7173859?utm_source=gb-gplus-sharePatent US7173859 - Faster programming of higher level states in multi-level cell flash memory
