Methods of planarizing one or more layers having an irregular top surface topology in a semiconductor device based on an underlying MOS structure are disclosed. Methods of creating doped wells or regions for the underlying MOS structure are also disclosed, using thick oxide growths on the surface of...http://www.google.de/patents/US5663086?utm_source=gb-gplus-sharePatent US5663086 - Method of forming a semiconductor device having CMOS structures on a semiconductor substrate
