Disclosed is a simplified technique of introducing a metal element capable of promoting the crystallization of silicon into an amorphous silicon film to be crystallized, and of removing the metal element from the film. An amorphous silicon film 102 is formed on a substrate, a mask 103 is formed thereon,...http://www.google.de/patents/US6232205?utm_source=gb-gplus-sharePatent US6232205 - Method for producing a semiconductor device
