The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF.sub.4 /O.sub.2, or a mixture of He/NF.sub.3, wherein...http://www.google.de/patents/US6107192?utm_source=gb-gplus-sharePatent US6107192 - Reactive preclean prior to metallization for sub-quarter micron application
