A fin field effect transistor (FinFET) includes a first gate and a second gate. The first gate has a vertical part that is defined by sidewalls of a silicon fin and sidewalls of a capping pattern disposed on the silicon fin and a horizontal part horizontally extends from the vertical part. The second...http://www.google.de/patents/US20050104096?utm_source=gb-gplus-sharePatent US20050104096 - FinFETs having first and second gates of different resistivities, and methods of fabricating the same
