A method of promoting crystalline performance of a region of irradiating laser beam by a plurality of times is provided. A first crystalline region is formed by subjecting a portion of an amorphous semiconductor film to laser annealing by using laser beam having a wavelength in a range of 370 nm through...http://www.google.de/patents/US20010036755?utm_source=gb-gplus-sharePatent US20010036755 - Method of fabricating semiconductor device
