A vertical field effect transistor (1) and a method of manufacturing thereof are disclosed, in which a buried layer (3) of a conduction type opposite to that of a substrate (2) is formed to a predetermined depth in the substrate (2) by ion implantation. The bottom of recess (2a) for forming a protrusion...http://www.google.de/patents/US6015725?utm_source=gb-gplus-sharePatent US6015725 - Vertical field effect transistor and manufacturing method thereof
