The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair...http://www.google.de/patents/US7180109?utm_source=gb-gplus-sharePatent US7180109 - Field effect transistor and method of fabrication
