The present invention pertains to methods for forming high quality thin interface oxide layers suitable for use with high-k gate dielectrics in the manufacture of semiconductor devices. An ambient that contains oxygen and a reducing agent is utilized to grow the layers. The oxygen facilitates growth...http://www.google.de/patents/US20040238904?utm_source=gb-gplus-sharePatent US20040238904 - High temperature interface layer growth for high-k gate dielectric
