The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride...http://www.google.de/patents/US7063995?utm_source=gb-gplus-sharePatent US7063995 - Nitride semiconductor light emitting device and manufacturing method thereof
