A thin-film transistor is provided in which the thickness of the insulating film is optimized. A gate electrode is formed on a transparent substrate. A silicon nitride film and a silicon oxide film, acting as a gate insulating film, are formed over the transparent substrate. A polycrystalline silicon...http://www.google.de/patents/US6613618?utm_source=gb-gplus-sharePatent US6613618 - Thin-film transistor and method of producing the same
