A process for selectively depositing a metal such as tungsten on a substrate material is provided. In one form, a layer of insulating material such as silicon dioxide is formed on the substrate. A layer of either aluminum oxide or titanium oxide is then formed over the substrate by a spin-on technique....http://www.google.de/patents/US4902533?utm_source=gb-gplus-sharePatent US4902533 - Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide
