A local interconnect system for VLSI integrated circuits. During self-aligned silicidation of exposed moat and gate regions in a nitrogen atmosphere, a conductive titanium nitride layer is formed overall. Normally this conductive layer is stripped to avoid shorting out devices. However, the present invention...http://www.google.de/patents/US5302539?utm_source=gb-gplus-sharePatent US5302539 - VLSI interconnect method and structure
