A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS ...http://www.google.de/patents/US5821559?utm_source=gb-gplus-sharePatent US5821559 - Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors 
