A semiconductor integrated circuit comprising thin-film transistors in each of which the second wiring is prevented from breaking at steps. A silicon nitride film is formed on gate electrodes and on gate wiring extending from the gate electrodes. Substantially triangular regions are formed out of an...http://www.google.de/patents/US7122833?utm_source=gb-gplus-sharePatent US7122833 - Semiconductor integrated circuit and method of fabricating same
