A Si-rich silicon oxide layer having reduced UV transmission is deposited by PECVD, on an interlayer dielectric, prior to metallization, thereby reducing Vt. Embodiments include depositing a UV opaque Si-rich silicon oxide layer having an R.I. of 1.7 to 2.0....http://www.google.de/patents/US7060554?utm_source=gb-gplus-sharePatent US7060554 - PECVD silicon-rich oxide layer for reduced UV charging
