A thin film transistor has a laminated structure comprising a semiconductor thin film, a gate insulator formed in contact with the surface of the semiconductor thin film, and a gate electrode disposed on the face side of the semiconductor thin film, and is formed on a substrate in a predetermined plan...http://www.google.de/patents/US20020066902?utm_source=gb-gplus-sharePatent US20020066902 - Method of fabricating thin film transistor
