A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After...http://www.google.de/patents/US6025265?utm_source=gb-gplus-sharePatent US6025265 - Method of forming a landing pad structure in an integrated circuit
