The invention is based on a thin-film semiconductor FET device. A field plate electrode for producing an electric field is formed on a channel-protecting film above the end of the gate electrode that is on the side of an offset region. Stable transistor characteristics can be maintained for a long time...http://www.google.de/patents/US5367180?utm_source=gb-gplus-sharePatent US5367180 - Thin-film semiconductor device with field plate
