In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure...http://www.google.de/patents/US6057565?utm_source=gb-gplus-sharePatent US6057565 - Semiconductor light emitting device including a non-stoichiometric compound layer and manufacturing method thereof
