A method for forming the lower electrode of a capacitor used for fabricating a 1-Gbit or above DRAM, using a material having a high dielectric constant, is used in a method for manufacturing a storage capacitor of a VLSI semiconductor device. The lower electrode, which is to be in contact...http://www.google.de/patents/US5824563?utm_source=gb-gplus-sharePatent US5824563 - Method for forming lower electrode of capacitor
