A polysilicon film pattern of a first conductivity type is formed on one main surface of a substrate. A gate electrode is formed on a predetermined region of the pattern with a gate insulating from interposed therebetween. A source region and a drain region, of a second conductivity type are formed in...http://www.google.de/patents/US5266816?utm_source=gb-gplus-sharePatent US5266816 - Polysilicon thin film semiconductor device containing nitrogen
