There is provided a method for forming element isolation insulating film of a semiconductor device by employing PBL method for reducing the bird's beak and increasing the length of the effective active region. The method comprising the steps of forming a pad-oxide film, a stack-silicon film, and a nitride...http://www.google.de/patents/US6153481?utm_source=gb-gplus-sharePatent US6153481 - Method for forming an isolation insulating film for internal elements of a semiconductor device
