A non-volatile memory (NVM) cell, which uses a storage dielectric as the storage element, has a top dielectric between a gate and the storage dielectric and a bottom dielectric between a semiconductor substrate and the storage dielectric. The top dielectric includes a relatively thick and high k dielectric...http://www.google.de/patents/US7135370?utm_source=gb-gplus-sharePatent US7135370 - Dielectric storage memory cell having high permittivity top dielectric and method therefor
