A semiconductor device includes a glass substrate, a heat sink formed on the glass substrate and a transistor formed on the heat sink. The transistor includes an active layer formed on the heat sink and having a source region, a channel region and a drain region. A gate electrode is placed on the channel...http://www.google.de/patents/US7053426?utm_source=gb-gplus-sharePatent US7053426 - Semiconductor device with heat sink
