Programming a NVM memory cell such as an NROM cell by using hot hole injection (HHI), followed by channel hot electron (CHE) injection. CHE injection increases the threshold voltage (Vt) of bits of memory cells that were disturbed (unnecessarily programmed) in HHI programming step. Page Write may be...http://www.google.de/patents/US7692961?utm_source=gb-gplus-sharePatent US7692961 - Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
