To provide a method of fabricating a thin film transistor which is capable of achieving a good ohmic contact between source and drain electrodes and a semiconductor layer, thereby solving problems of the conventional method....http://www.google.de/patents/US6391691?utm_source=gb-gplus-sharePatent US6391691 - Method of fabricating a thin film transistor with metal source and drain electrodes by diffusing impurities from a semiconductor layer
