Nickel silicidation of a gate electrode is controlled using a tungsten silicide barrier layer. Embodiments include forming a gate electrode structure comprising a lower polycrystalline silicon layer, a layer of tungsten silicide thereon and an upper polycrystalline silicon layer on the tungsten silicide...http://www.google.de/patents/US6432817?utm_source=gb-gplus-sharePatent US6432817 - Tungsten silicide barrier for nickel silicidation of a gate electrode
