The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the...http://www.google.de/patents/US7824946?utm_source=gb-gplus-sharePatent US7824946 - Isolated metal plug process for use in fabricating carbon nanotube memory cells
