A first semiconductor structure has a silicon substrate, a first silicon germanium layer grown on the silicon, a second silicon germanium layer on the first silicon germanium layer, and a strained silicon layer on the second silicon germanium layer. A second semiconductor structure has a silicon substrate...http://www.google.de/patents/US20050181549?utm_source=gb-gplus-sharePatent US20050181549 - Semiconductor structure having strained semiconductor and method therefor
