Described herein are a device utilizing a gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is modified by semiconductor band engineering and article made thereby. Further described herein are methods of...http://www.google.de/patents/US7902014?utm_source=gb-gplus-sharePatent US7902014 - CMOS devices with a single work function gate electrode and method of fabrication
