A method of making a non-volatile semiconductor memory device including a memory transistor of a dual gate structure in a memory cell adapted for storing memory information. A first gate insulating layer, a first electronically conductive layer and a second gate insulating layer are formed on the main...http://www.google.de/patents/US5286665?utm_source=gb-gplus-sharePatent US5286665 - Method of manufacturing MDS memory device having a LDD structure and a visor-like insulating layer
