A CMOS device with transistors having different gate dielectric materials and a method of manufacture thereof. A CMOS device is formed on a workpiece having a first region and a second region. A first gate dielectric material is deposited over the second region. A first gate material is deposited over...http://www.google.de/patents/US8178902?utm_source=gb-gplus-sharePatent US8178902 - CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
