In irradiating and scanning an amorphous silicon film formed on the glass substrate with a linear laser beam, the glass substrate is placed so as to assume a convex surface. In a heated state, the amorphous silicon film is irradiated and scanned with the linear laser beam having an inverted-U-shaped...http://www.google.de/patents/US5858822?utm_source=gb-gplus-sharePatent US5858822 - Method for producing semiconductor device
