A process for formation of a thin film transistor liquid crystal display is disclosed, in which an etch-back type 3-mask process or an etch stopper type 4-mask process is applied, so that the semiconductor layer of the thin film transistor can be isolated from the data line. Consequently, the optical...http://www.google.de/patents/US5478766?utm_source=gb-gplus-sharePatent US5478766 - Process for formation of thin film transistor liquid crystal display
