A method of fabricating a DRAM cell and the DRAM cell include a substrate, and a bit line formed in a first direction on the substrate. A channel region is then formed on a portion of the bit line. The channel region has a lateral surface extending vertically from the bit line. A first insulating layer...http://www.google.de/patents/US6117724?utm_source=gb-gplus-sharePatent US6117724 - DRAM cell and method of fabricating the same
