The invention relates to the formation of structures in microelectronic devices such as integrated circuit devices by means of borderless via architectures in intermetal dielectrics. An integrated circuit structure has a substrate, a layer of a second dielectric material positioned on the substrate and...http://www.google.de/patents/US20020158283?utm_source=gb-gplus-sharePatent US20020158283 - Fabrication of integrated circuits with borderless vias
