A method for fabricating an LDD MOS transistor having an improved structure capable of simplifying the fabrication and improving characteristics of the transistor. The methods includes the steps of forming a field oxide film for an active region isolation on a silicon substrate, thickly depositing an...http://www.google.de/patents/US5374575?utm_source=gb-gplus-sharePatent US5374575 - Method for fabricating MOS transistor
