A low temperature CVD process using a tris (.beta.-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase...http://www.google.de/patents/US6303391?utm_source=gb-gplus-sharePatent US6303391 - Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
