The invention relates to a dual masked spacer etch for improved dark current performance in imagers. After deposition of spacer material such as oxide, N-channel regions are first opened for N+ source/drain implant and P-channel regions are then opened for P+ source/drain implant. Prior to the N+ source/drain...http://www.google.de/patents/US7355229?utm_source=gb-gplus-sharePatent US7355229 - Masked spacer etching for imagers
