A method for fabricating an integrated circuit capacitor includes the steps of forming a first electrode on a microelectronic substrate, and plasma treating the first electrode with a with a plasma of a gas including nitrogen and oxygen. A dielectric film is formed on the plasma treated ...http://www.google.de/patents/US5780115?utm_source=gb-gplus-sharePatent US5780115 - Methods for fabricating electrode structures including oxygen and nitrogen plasma treatments 
